Samsung Electronics is looking to advance the technology for its memory chips to maintain its dominant position, as it has shared a breakthrough that may revolutionize its memory lineup.
Samsung is one of the leading brands in the global memory chip market, and now it is trying to maintain its dominant position, as its rival brands are doing well actively. Meanwhile, a new report from a reliable blog revealed that the company has announced a new ultra-low-power memory technology to bring a new revolution to its memory chips.
According to the report, this new technology is based on ferroelectric transistors (FeFET), which significantly reduce power consumption and boost the capacity of the memory chip. The FeFET-based memory developed using a ferroelectric material helps to reduce power consumption by up to 96% in the string structure then conventional NAND memory.
As a result of this new technology, the memory chips will be compatible with storing more data without requiring more power. However, this technology only exists as a research project, but the company announcing it is a signal that eventually this will be utilized in the company’s memory products.
Samsung has yet to release any official statement regarding this new ultra-low-power memory technology; it remains to be seen whether the company will utilize this technology in its memory chips.
