Samsung to unveil improved 3nm and performance-enhanced 4nm chip fabrication technology

In the past, Samsung had faced much criticism over the poor performance of the Exynos 2200 processor because it was not as efficient as TSMC’s 4nm process that was prudent in Apple’s bionic chips, so the company has planned to introduce its improved 3nm and 4nm chip manufacturing technology at VLSI symposium 2023.

The event will be organized from 11 June to 16 June 2023 in Kyoto, Japan. In this event, the South Korean firm will showcase its upgraded 3nm and 4nm processes.

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This event aims to showcase the improvements to 3nm and 4nm chips made by Samsung foundries. The technology will bring improved performance, efficiency, and a characteristic to reduce the component’s temperature compared to previous generations significantly.

As per the information, According to information, the SF3 process will use the 3nm GAP technology, a successor technology to the SF3E process announced by the company in the second half of last year. Apparently, performance should receive a 22% increment at the same clock, while energy efficiency should be up to 34% better compared to SF4 (4nm EUV LPP).

As an improved technology in the chip segment, it is expected that it could be implemented in the upcoming generation of Qualcomm and the company’s own processor, namely Snapdragon 8 Gen 4 and Exynos 2500, respectively.

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