Samsung developed the fastest and highest-capacity memory solution, 24GB GDDR7 DRAM. This new technology is ideal for future-generation applications. With its high capacity and powerful performance, the 24GB GDDR7 will be widely utilized in various fields that require high-performance memory solutions.
YongCheol Bae, Executive Vice President of Memory Product Planning at Samsung Electronics, stated, “We will continue to lead the graphics DRAM market by bringing next-generation products that align with the growing needs of the AI market.”
The 24GB GDDR7 utilizes 5th-generation 10-nanometer (nm)-class DRAM, which authorizes cell density to increase by 50% while maintaining the same package size similar to its predecessor.
In addition to the advanced process note, three-level Pluse-Amplitude Modulation (PAM3) signaling helps to achieve the industry-leading speed of graphics DRAM of 40GBs per. The main 25% upgrades over the previous version. It’s expected that the newly developed GDDR7’s performance can be further enhanced to up to 42.5 Mbps, depending on the usage environment.
Power efficiency is also upgraded by applying technologies that were previously used in smartphone products to graphics DRAM. Noticeably, to boost operational stability during high-speed operations, the 24GB GDDR7 minimizes current leakage by using power gating design techniques.
The company will start the validation for the 24GB GDDR7 in next-generation AI computing systems from major GPU customers this year.
