The South Korean tech company made the formal announcement on September 1, 2023, that they have created the first ever largest capacity 32 gigabit (Gb) DDR5 DRAM in the industry utilizing 12 nm class manufacturing technology. The business stated that this accomplishment follows Samsung’s starting to mass produce its 16 GB DDR5 12 nm class memory in May 2023.
Previously, the Through Silicon Via (TSV) technology was necessary to produce DDR5 128 GB DRAM modules utilizing 16 GB DRAM.
In the 40 years since creating its initial 64-kilobit (Kb) DRAM, Samsung has been able to increase the capacity of its DRAM by a form factor of 500,000. Additionally, the production of the 128 GB module without the need for the TSV process and a 10% reduction in power consumption over 128 GB modules using 16 GB DRAM can be enabled using Samsung’s 32 GB DRAM. By the end of this year, mass manufacturing of the new 32 GB DDR5 12 nm DRAM is predicted to begin.
The portfolio of high-capacity DRAM will be extended by the firm using its 12 nm class 32 GB DDR5 DRAM as a basis to satisfy the needs of IT sectors in the future, and it will also be a crucial component in maintaining a strong collaboration between Samsung and other market participants. It has the largest capacity for a single DRAM chip in the market and provides double the capacity of 16 GB of DDR5 DRAM in the same package size.
SangJoon Hwang, Executive Vice President of DRAM Product & Technology at Samsung Electronics, said that With our 12nm-class 32Gb DRAM, we have secured a solution that will enable DRAM modules of up to 1 terabyte (TB), allowing us to be ideally positioned to serve the growing need for high-capacity DRAM in the era of AI (artificial intelligence) and big data. We will continue to develop DRAM solutions through differentiated processes and design technologies to break the boundaries of memory technology.”
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